Rongming Chu
0000-0003-3262-5120
61 papers found
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Effects of Barrier Thinning on Small-Signal and 30-GHz Power Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistors
1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance
Temperature-dependence and microscopic origin of low frequency 1/f noise in GaN/AlGaN high electron mobility transistors
Growth and characterization of AlGaN/GaN/AlGaN field effect transistors
High-temperature molecular beam epitaxial growth of AlGaN/GaN on GaN templates with reduced interface impurity levels
MOCVD-Grown AlGaN Buffer GaN HEMTs With V-Gates for Microwave Power Applications
AlGaN/GaN HEMT With a Transparent Gate Electrode
A comparative study of effects of SiNx deposition method on AlGaN/GaN heterostructure field-effect transistors
Growth of AlGaN/GaN heterojunction field effect transistors on semi-insulating GaN using an AlGaN interlayer
Electrical properties of N-polar AlGaN/GaN high electron mobility transistors grown on SiC by metalorganic chemical vapor deposition
V-Gate GaN HEMTs With Engineered Buffer for Normally Off Operation
N-Face Metal–Insulator–Semiconductor High-Electron-Mobility Transistors With AlN Back-Barrier
V-Gate GaN HEMTs for X-Band Power Applications
Dislocation Reduction in AlGaN/GaN Heterostructures on 4H-SiC by Molecular Beam Epitaxy in the Thermal Decomposition Regime
Improved Performance of Plasma-Assisted Molecular Beam Epitaxy Grown AlGaN/GaN High Electron Mobility Transistors with Gate-Recess and CF4-Treatment
Effect of Al Composition and Gate Recess on Power Performance of AlGaN/GaN High-Electron Mobility Transistors
Correlation Between DC–RF Dispersion and Gate Leakage in Deeply Recessed GaN/AlGaN/GaN HEMTs
Plasma Treatment for Leakage Reduction in AlGaN/GaN and GaN Schottky Contacts
X- and Ka-band power performance of AlGaN/GaN HEMTs grown by ammonia-MBE
Influence of the substrate misorientation on the properties of N-polar InGaN/GaN and AlGaN/GaN heterostructures
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