Maojun Wang
0000-0002-9078-6961
Peking University
9 papers found
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Output Phase and Amplitude Analysis of GaN-Based HEMT at Cryogenic Temperatures
Temperature-Dependent Dynamic Degradation of Carbon-Doped GaN HEMTs
Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate With 1010 High On/Off Current Ratio and Low Specific On-Resistance
Planar Dual Gate GaN HEMT Cascode Amplifier as a Voltage Readout pH Sensor With High and Tunable Sensitivities
Investigation of the Trap States and $V_{\text{TH}}$ Instability in LPCVD Si3N4/AlGaN/GaN MIS-HEMTs with an In-Situ Si3N4 Interfacial Layer
A Compact Model for Border Traps in Lateral MOS Devices with Large Channel Resistance
Optimization of Au-Free Ohmic Contact Based on the Gate-First Double-Metal AlGaN/GaN MIS-HEMTs and SBDs Process
Schottky-MOS Hybrid Anode AlGaN/GaN Lateral Field-Effect Rectifier With Low Onset Voltage and Improved Breakdown Voltage
Gate-Recessed Normally-OFF GaN MOSHEMT With Improved Channel Mobility and Dynamic Performance Using AlN/Si3N4 as Passivation and Post Gate-Recess Channel Protection Layers
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