Papers authored by P. M. Voyles
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2004
P. M. Voyles 
,
D. A. Muller ,
E. J. Kirkland
,
D. A. Muller ,
E. J. Kirkland
Depth-Dependent Imaging of Individual Dopant Atoms in Silicon
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Greta M. Zenner,
Wendy C. Crone,
J. Aura Gimm,
J. A. Gimm,
Ken W. Lux,
Paul M. Voyles ,
Nicholas L. Abbott,
Cindy G. Carter,
Anthony P. Cina,
A. P. Coming,
Ann Pumper Comins,
Johan Tabora,
Pamela Tuchscherer,
Tyson Tuchscherer,
P. J. Whitsett
and 2 other authors
,
Nicholas L. Abbott,
Cindy G. Carter,
Anthony P. Cina,
A. P. Coming,
Ann Pumper Comins,
Johan Tabora,
Pamela Tuchscherer,
Tyson Tuchscherer,
P. J. Whitsett
and 2 other authors
Turning Cutting-Edge Research into Secondary Curriculum
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2003
P. H. Citrin,
P. M. Voyles ,
D. J. Chadi,
D. A. Muller
,
D. J. Chadi,
D. A. Muller
A new class of defects in highly n-doped silicon
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P. M. Voyles ,
D. J. Chadi,
P. H. Citrin,
Muller Da,
D. A. Muller ,
J. L. Grazul,
P. A. Northrup,
Northrup Pa,
H.-J. L. Gossmann
,
D. J. Chadi,
P. H. Citrin,
Muller Da,
D. A. Muller ,
J. L. Grazul,
P. A. Northrup,
Northrup Pa,
H.-J. L. Gossmann
Evidence for a New Class of Defects in Highly n -Doped Si: Donor-Pair-Vacancy-Interstitial Complexes
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J. E. Gerbi,
P. M. Voyles ,
M. M. J. Treacy,
J. M. Gibson,
J. R. Abelson
,
M. M. J. Treacy,
J. M. Gibson,
J. R. Abelson
Increasing medium-range order in amorphous silicon with low-energy ion bombardment
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Martin R. Castell,
David A. Muller ,
Paul M. Voyles
,
Paul M. Voyles
Dopant mapping for the nanotechnology age
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M.-Y. Ho,
H. Gong ,
G. D. Wilk,
B. W. Busch,
M. L. Green,
P. M. Voyles ,
D. A. Muller,
M. Bude,
W. H. Lin,
A. See,
M. E. Loomans,
S. K. Lahiri,
Petri I. Räisänen
,
G. D. Wilk,
B. W. Busch,
M. L. Green,
P. M. Voyles ,
D. A. Muller,
M. Bude,
W. H. Lin,
A. See,
M. E. Loomans,
S. K. Lahiri,
Petri I. Räisänen
Morphology and crystallization kinetics in HfO2 thin films grown by atomic layer deposition
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P. M. Voyles ,
D. A. Muller ,
J. L. Grazul,
P. H. Citrin,
H.-J. L. Gossmann
,
D. A. Muller ,
J. L. Grazul,
P. H. Citrin,
H.-J. L. Gossmann
Atomic-scale imaging of individual dopant atoms and clusters in highly n-type bulk Si
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