Masashi Kato
0000-0002-2921-709X
52 papers found
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Characterization of deep levels in 6H-SiC by optical-capacitance-transient spectroscopy
Etch Pit Observation for 6H-SiC by Electrochemical Etching Using an Aqueous KOH Solution
Deep Level Characterization and its Passivation in 3C-SiC Monitored by Capacitance Transient Methods
Deep center passivation in 3C-SiC by hydrogen plasma with a grid for damage suppression
Characterization of deep levels in 3C-SiC by optical-capacitance-transient spectroscopy
Deep level study in epitaxial 4H-SiC grown on substrates inclined toward
Characteristics of Schottky Diodes on 6H-SiC Surfaces after Sacrificial Anodic Oxidation
Sacrificial Anodic Oxidation of 6H-SiC
Deep Level Study in Heteroepitaxial 3C-SiC Grown on Si by Hexamethyldisilane
DLTS study of 3C-SiC grown on Si using hexamethyldisilane
Passivation of Deep Levels in 3C-SiC on Si by a Hydrogen Plasma Treatment
Search for Midgap Levels in 3C-SiC Grown on Si Substrates
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