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Advanced residual stress analysis on the heteroepitaxial growth of 3C-SiC/Si for MEMS application
Download from iopscience.iop.org3C-SiC Film Growth on Si Substrates
Download from iopscience.iop.org(Invited) High Quality 3C-SiC for MOS Applications
Download from www.researchgate.netHigh Power Density UV Optical Stress for Quality Evaluation of 4H-SiC Epitaxial Layers
Download from doi.orgGrowth Rate Effect on 3C-SiC Film Residual Stress on (100) Si Substrates
Download from www.researchgate.netBow in 6 inch high-quality off-axis (111) 3C-SiC films
Download from doi.orgEvolution of Stacking Faults Defects During Epitaxial Growths: Role of Surface Kinetics
Download from www.researchgate.netHigh-quality 6inch (111) 3C-SiC films grown on off-axis (111) Si substrates
Download from www.researchgate.netMultiscale simulation for epitaxial silicon carbide growth by chlorides route
Download from www.researchgate.netExtended Study of the Step-bunching Mechanism During the Homoepitaxial Growth of SiC
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