Ting-Chang Chang
0000-0002-5301-6693
36 papers found
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Predicting voltage induced positive-feedback effect on dynamic reset behavior in resistance switching device
The Demonstration of Increased Selectivity During Experimental Measurement in Filament-Type Vanadium Oxide-Based Selector
Enhancement of Surface Chemical and Physical Properties of Germanium-Sulfur Thin Film Using a Water-Supplemented Carbon Dioxide Supercritical Fluid Treatment Technique
Analyzing Electric Field Effect by Applying an Ultra-Short Time Pulse Condition in Hafnium Oxide-Based RRAM
Model of dielectric breakdown in hafnia-based ferroelectric capacitors
Integrating a Charge Trapping Layer in Passivated Emitter Rear Contact Cell to Enhance Efficiency
Tuning the nanostructures and optical properties of undoped and N-doped ZnO by supercritical fluid treatment
A Method to Reduce Forming Voltage Without Degrading Device Performance in Hafnium Oxide-Based 1T1R Resistive Random Access Memory
Enhancing the Electrical Uniformity and Reliability of the HfO2-Based RRAM Using High-Permittivity Ta2O5 Side Wall
Super Critical Fluid Technique to Enhance Current Output on Amorphous Silicon-Based Photovoltaic
Investigating degradation behaviors induced by mobile Cu ions under high temperature negative bias stress in a-InGaZnO thin film transistors
H2O adsorption on amorphous In-Ga-Zn-O thin-film transistors under negative bias stress
Effects of plasma treatment time on surface characteristics of indium-tin-oxide film for resistive switching storage applications
Solving the Scaling Issue of Increasing Forming Voltage in Resistive Random Access Memory Using High-k Spacer Structure
Abnormal Recovery Phenomenon Induced by Hole Injection During Hot Carrier Degradation in SOI n-MOSFETs
Impact of repeated uniaxial mechanical strain on flexible a-IGZO thin film transistors with symmetric and asymmetric structures
Fast-IV Measurement Investigation of the Role of TiN Gate Nitrogen Concentration on Bulk Traps in HfO2 Layer in p-MOSFETs
Analysis of Contrasting Degradation Behaviors in Channel and Drift Regions Under Hot Carrier Stress in PDSOI LD N-Channel MOSFETs
The effect of device electrode geometry on performance after hot-carrier stress in amorphous In-Ga-Zn-O thin film transistors with different via-contact structures
Investigation of a Hump Phenomenon in Back-Channel-Etched Amorphous In-Ga-Zn-O Thin-Film Transistors Under Negative Bias Stress
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