All papers authored by Jean-Francois Michaud
Refreshing results…
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Marius Grundmann ,
Marc Portail,
Philippe Vennéguès,
Marcin Zielinski,
Thierry Chassagne ,
Daniel Alquier,
Jean-François Michaud
Realization of minimum number of rotational domains in heteroepitaxied Si(110) on 3C-SiC(001)
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Emilie Bahette,
Marc Portail,
Daniel Alquier,
Jean-François Michaud
Toward high-quality 3C SiC membrane on a 3C-SiC pseudo-substrate
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Marc Portail,
Philippe Vennéguès,
Daniel Alquier,
Jean François Michaud
Direct insight into grains formation in Si layers grown on 3C-SiC by chemical vapor deposition
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C. Moisson,
M. Zielinski,
S. Jiao,
J.-F. Michaud ,
D. Alquier,
J. Bouloc,
L. Nony,
F. Bocquet
and 3 other authors
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D. Certon,
D. Gross,
D. Alquier
Progresses in cMUT device fabrication using low temperature processes
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M. Portail,
T. Chassagne ,
M. Zielinski,
D. Alquier
Original 3C-SiC micro-structure on a 3C-SiC pseudo-substrate
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M. Portail,
A. Madouri,
T. Chassagne ,
M. Zielinski,
D. Alquier
A new approach for AFM cantilever elaboration with 3C-SiC
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Sai Jiao,
Thierry Chassagne ,
Anne-Elisabeth Bazin,
Adrien Michon,
Marc Portail,
Daniel Alquier
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F. Cayrel,
M. Portail,
T. Chassagne ,
M. Zielinski,
E. Collard,
D. Alquier,
Gabriel Ferro,
Paul Siffert
High Quality Ohmic Contacts on n-type 3C-SiC Obtained by High and Low Process Temperature
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J. F. Michaud ,
M. Portail,
D. Alquier,
Gabriel Ferro,
Paul Siffert
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C. Autret Lambert,
F. Cayrel,
T. Chassagne ,
M. Portail,
M. Zielinski,
E. Collard,
D. Alquier
Ti–Ni ohmic contacts on 3C–SiC doped by nitrogen or phosphorus implantation
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F. Cayrel,
M. Zielinski,
M. Portail,
T. Chassagne ,
E. Collard,
D. Alquier
Evidence of electrical activity of extended defects in 3C–SiC grown on Si
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A. Michon,
M. Nemoz,
M. Portail,
J. F. Michaud ,
D. Alquier,
Gabriel Ferro,
Paul Siffert
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Sai Jiao,
Anne-Elisabeth Bazin,
Marc Portail,
Thierry Chassagne ,
Marcin Zielinski,
Daniel Alquier
Micromachining of thin 3C-SiC films for mechanical properties investigation
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Marc Portail,
Thierry Chassagne ,
Marcin Zielinski,
Jean-Marc Lecoq,
Emmanuel Collard,
Daniel Alquier
P Implantation Effect on Specific Contact Resistance in 3C-SiC Grown on Si
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