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All papers authored by Rami Khazaka

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2018 Rami Khazaka

ORCID

, Yann Bogumilowicz, Denis Rouchon, Hervé Boutry, Zdenek Chalupa, Valérie Lapras, Bernard Prévitali, Nicolas Chevalier, Anne Marie Papon, Sylvain David, Sylvain Maitrejean

Confined selective lateral epitaxial growth of 16-nm thick Ge nanostructures on SOI substrates: Advantages and challenges

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Rami Khazaka

ORCID

, Yann Bogumilowicz, Anne-Marie Papon, Hugo Dansas, Hervé Boutry, Zdenek Chalupa, Valérie Lapras, Bernard Prévitali, Sylvain Maitrejean

Local lateral integration of 16-nm thick Ge nanowires on silicon on insulator substrates

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2017 Rami Khazaka

ORCID

, Jean François Michaud

ORCID

, Philippe Vennéguès, Daniel Alquier, Marc Portail

Turning the undesired voids in silicon into a tool: In-situ fabrication of free-standing 3C-SiC membranes

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2016 Rami Khazaka

ORCID

, Jean-François Michaud

ORCID

, Philippe Vennéguès, Luan Nguyen, Daniel Alquier, Marc Portail

On the interplay between Si(110) epilayer atomic roughness and subsequent 3C-SiC growth direction

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Rami Khazaka

ORCID

, Marius Grundmann

ORCID

, Marc Portail, Philippe Vennéguès, Marcin Zielinski, Thierry Chassagne

ORCID

, Daniel Alquier, Jean-François Michaud

ORCID

Realization of minimum number of rotational domains in heteroepitaxied Si(110) on 3C-SiC(001)

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2015 Rami Khazaka

ORCID

, Emilie Bahette, Marc Portail, Daniel Alquier, Jean-François Michaud

ORCID

Toward high-quality 3C SiC membrane on a 3C-SiC pseudo-substrate

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Rami Khazaka

ORCID

, Marc Portail, Philippe Vennéguès, Daniel Alquier, Jean François Michaud

ORCID

Direct insight into grains formation in Si layers grown on 3C-SiC by chemical vapor deposition

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Rami Khazaka

ORCID

, Marc Portail, P. Vennéguès, Marcin Zielinski

ORCID

, Thierry Chassagne, Daniel Alquier, Jean François Michaud

ORCID

Silicon Growth on 3C-SiC(001)/Si(001): Pressure Influence and Thermal Effect

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Roy Dagher, Rami Khazaka

ORCID

, Stephane Vézian, Monique Teissiere, Adrien Michon, Marcin Zielinski, Thierry Chassagne, Yvon Cordier, Marc Portail

Structural Investigation of Si Quantum Dots Grown by CVD on AlN/Si(111) and 3C-SiC/Si(100) Epilayers

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