Jose Sanchez-Dehesa - Dissemin

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Papers authored by Jose Sanchez-Dehesa

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1993 J. Sánchez-Dehesa

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, J. A. Porto, F. Agulló-Rueda, F. Meseguer

Electronic energy levels of quantum-well wires

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1992 F. Meseguer, N. Mestres, J. Sa´nchez-Dehesa

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, C. Deparis, G. Neu, J. Massies

Magneto-optics of narrow GaAs/AlxGa1−xAs quantum wells grown on vicinal substrates

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J. Sánchez-Dehesa

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, J. L. Sánchez-Rojas, C. Lopez, R. J. Nicholas

Enhanced carrier densities and device performance in piezoelectric pseudomorphic high-electron mobility transistor structures

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1991 J. Sanchez-Dehesa

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, D. Lavielle, E. Ranz, B. Goutiers, J. C. Portal, E. Barbier, A. Y. Cho, D. L. Sivco

Pressure experiments and self-consistent modelling of the transport properties in delta -doped AlGaAs layers

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C. Lopez, Francisco Meseguer, Jose Sanchez-Dehesa

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, Wolfgang W. Ruehle, Klaus H. Ploog

Time-resolved luminescence experiments on modulation n-doped GaAs quantum wells

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C. López, F. Meseguer, J. Sánchez-Dehesa

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, W. W. Rühle, K. Ploog

Tunneling time of electrons in modulation n- doped GaAlAsGaAsAlAs quantum wells

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1990 C. López, F. Meseguer, J. Sánchez-Dehesa

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, K. Ploog

Magnetoluminescence studies of modulation n-doped GaAsAlGaAs multiple quantum wells

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C. López, J. Sánchez-Dehesa

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, F. Meseguer, F. Borondo, K. Ploog

Electronic structure of modulation n-doped multiple quantum well

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1988 J. Sánchez-Dehesa

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, F. Flores, J. Ortega, J. D. Dow

Schottky barrier formation in defect-free metal/III–V semiconductor junctions

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Alfonso Muoz, Jose Sánchez-Dehesa

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, Fernando Flores

Reply to ‘‘Comment on ‘Heterojunction valence-band-discontinuity dependence on face orientation’ ’’

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1987 J. Sanchez-Dehesa

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, F. Meseguer, F. Borondo, J. C. Maan

Self-consistent calculation of the electronic properties of a selectively dopedAlxGa1−xAs−GaAsquantum well under high magnetic fields

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Alfonso Muoz, José Sánchez-Dehesa

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, Fernando Flores

Heterojunction valence-band-discontinuity dependence on face orientation

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1986 A. Muñoz, J. Sánchez Dehesa

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, F. Flores

Early Stages of GaAs-Ge(110) Interface Formation

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F. Borondo, J. Sánchez-Dehesa

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Electronic structure of a GaAs quantum well in an electric field

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G. Platero, J. Sánchez-Dehesa

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, C. Tejedor, F. Flores, A. Muñoz

Anion-induced surface states for the ideal (100) faces of GaAs, AlAs and GaSb

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Seongbok Lee, J. Sanchez-Dehesa

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, John D. Dow

Erratum: Theoretical investigation of the pressure dependences of energy gaps in semiconductors [Phys. Rev. B 32, 1152 (1985)]

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G. Platero, J. Sánchez-Dehesa

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, C. Tejedor, F. Flores

Electronic structure of (100) semiconductor heterojunctions

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1985 Seongbok Lee, J. Sanchez-Dehesa

ORCID

, John D. Dow

Theoretical investigation of the pressure dependences of energy gaps in semiconductors

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1984 J. Sanchez Dehesa

ORCID

, F. Flores, F. Guinea

Schottky barrier formation. II. Etched metal-semiconductor junctions

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F. Flores, J. Sánchez Dehesa

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, F. Guinea

Metal-Semiconductor Junctions

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