Martin Huber
0000-0002-6398-1008
Infineon Technologies AG
3 papers found
Refreshing results…
The interplay of blocking properties with charge and potential redistribution in thin carbon-doped GaN on n-doped GaN layers
Characterization of AlN/AlGaN/GaN:C heterostructures grown on Si(111) using atom probe tomography, secondary ion mass spectrometry, and vertical current-voltage measurements
Impact of residual carbon impurities and gallium vacancies on trapping effects in AlGaN/GaN metal insulator semiconductor high electron mobility transistors
Missing publications? Search for publications with a matching author name.