Benjamin Iñiguez
0000-0002-6504-7980
University Rovira i Virgili
25 papers found
Refreshing results…
Non-Linear Output-Conductance Function for Robust Analysis of Two-Dimensional Transistors
Dynamic simulation of a-IGZO TFT circuits using the Analytical Full Capacitance Model (AFCM)
Foreword Special Issue on Compact Modeling of Semiconductor Devices
Equivalent DG Dimensions Concept for Compact Modeling of Short-Channel and Thin Body GAA MOSFETs Including Quantum Confinement
1/f noise analysis in high mobility polymer-based OTFTs with non-fluorinated dielectric
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