Zhen Huang
www.daqi-group.cn
0000-0003-0733-9149
Anhui University
99 papers found
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Metallic state in La-doped YBa2Cu3Oythin films withn-type charge carriers
Tuning the ground state of La0.67Ca0.33MnO3films via coherent growth on orthorhombic NdGaO3substrates with different orientations
Magnetic-field induced resistivity minimum with in-plane linear magnetoresistance of the Fermi liquid in SrTiO3−xsingle crystals
Atomically flat interface between a single-terminated LaAlO3 substrate and SrTiO3 thin film is insulating
Metal-Insulator Transition inSrTiO3−xThin Films Induced by Frozen-Out Carriers
Pseudomorphic strain induced strong anisotropic magnetoresistance over a wide temperature range in epitaxial La0.67Ca0.33MnO3/NdGaO3(001) films
Dynamic phase separation as revealed by the strong resistance relaxation in epitaxially shear-strained La0.67Ca0.33MnO3/NdGaO3(001) thin-films
Phase evolution and the multiple metal-insulator transitions in epitaxially shear-strained La0.67Ca0.33MnO3/NdGaO3(001) films
Effect of electrode configurations on the process-induced imprint behavior of epitaxial Pb(Zr0.52Ti0.48)O3 capacitors
Anisotropic-strain-induced antiferromagnetic-insulating state with strong phase instability in epitaxial (La0.8Pr0.2)0.67Ca0.33MnO3 films
Control of the charge-ordering-insulating phase in epitaxial La1−xCaxMnO3 (x=0.30–0.45) thin films under the anisotropic strain
Oxygen in-diffusion at room temperature in epitaxial La0.7Ca0.3MnO3−δthin films
Anisotropic-strain-induced monoclinic distortion and robust charge-ordering in ultrathin Pr0.5Sr0.5MnO3films
Shear-strain-induced low symmetry phase and domain ordering in epitaxial La0.7Sr0.3MnO3 thin films
The thickness evolution of orthorhombic lattice distortions in heteroepitaxial La0.67Ca0.33MnO3/NdGaO3(110)Orobserved by x-ray reciprocal space mapping
Strain state evolution and thickness-dependent properties of epitaxialNd0.7Sr0.3MnO3films
Fabrication and characterization of solid state proton conductor (NH4)2SiP4O13–NH4PO3 for fuel cells operated at 150–250 °C
Ultrathin BaTiO3‑Based Ferroelectric Tunnel Junctions through Interface Engineering
Controlling the Magnetic Properties of LaMnO3/SrTiO3 Heterostructures by Stoichiometry and Electronic Reconstruction: Atomic-Scale Evidence
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