Masataka Higashiwaki

Papers authored by Masataka Higashiwaki

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2021 Masataka Higashiwaki

β‐Gallium Oxide Devices: Progress and Outlook

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Abdul Mannan

, Kota Yamahara

, Filchito Renee G. Bagsican, Kazunori Serita

, Hironaru Murakami

, Iwao Kawayama, Masataka Higashiwaki

, Masayoshi Tonouchi

Terahertz emission spectroscopy of GaN-based heterostructures

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Takeyoshi Onuma

, Kohei Sasaki

, Tomohiro Yamaguchi

, Tohru Honda, Akito Kuramata, Shigenobu Yamakoshi

, Masataka Higashiwaki

Selective observation of transverse optical phonons of A_u modes to evaluate free charge carrier parameters in β-Ga₂O₃ substrate and homoepitaxial film

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Masataka Higashiwaki

, Robert Kaplar

, Julien Pernot, Hongping Zhao

Ultrawide bandgap semiconductors

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Masahiko Nakanishi, Man Hoi Wong

, Tomohiro Yamaguchi

, Tohru Honda, Masataka Higashiwaki

, Takeyoshi Onuma

Effect of thermal annealing on photoexcited carriers in nitrogen-ion-implanted β-Ga₂O₃ crystals detected by photocurrent measurement

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Takafumi Kamimura

, Yoshiaki Nakata, Masataka Higashiwaki

Effect of (AlGa)2O3 back barrier on device characteristics of β-Ga2O3 metal-oxide-semiconductor field-effect transistors with Si-implanted channel

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Man Hoi Wong

, Hisashi Murakami, Yoshinao Kumagai, Masataka Higashiwaki

Aperture-limited conduction and its possible mechanism in ion-implanted current aperture vertical β-Ga2O3 MOSFETs

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Masataka Higashiwaki

Fundamental technologies for gallium oxide transistors

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2020 C. De Santi

, M. Fregolent

, M. Buffolo

, M. H. Wong

, M. Higashiwaki

, G. Meneghesso

, E. Zanoni

, M. Meneghini

Carrier capture kinetics, deep levels, and isolation properties of β-Ga2O3 Schottky-barrier diodes damaged by nitrogen implantation

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Takafumi Kamimura

, Yoshiaki Nakata, Masataka Higashiwaki

Delay-time analysis in radio-frequency β-Ga2O3 field effect transistors

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Abhishek Mishra

, Taylor Moule, Michael J. Uren

, Man Hoi Wong

, Ken Goto

, Hisashi Murakami, Yoshinao Kumagai, Masataka Higashiwaki

, Martin Kuball

Characterization of trap states in buried nitrogen-implanted β-Ga2O3

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Sandeep Kumar

, Takafumi Kamimura

, Chia-Hung Lin

, Yoshiaki Nakata, Masataka Higashiwaki

Reduction in leakage current through interface between Ga2O3 epitaxial layer and substrate by ion implantation doping of compensating impurities

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Man Hoi Wong

, Masataka Higashiwaki

Vertical β-Ga₂O₃ Power Transistors: A Review

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Masataka Higashiwaki

, Man Hoi Wong, Ken Goto, Hisashi Murakami, Yoshinao Kumagai

Vertical Gallium Oxide Transistors with Current Aperture Formed Using Nitrogen-Ion Implantation Process

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Rafał Korlacki

, Alyssa Mock

, Chad Briley, Vanya Darakchieva

, Bo Monemar, Yoshinao Kumagai, Ken Goto, Masataka Higashiwaki

, Mathias Schubert

Comment on “Characteristics of Multi-photon Absorption in a β-Ga2O3 Single Crystal” [J. Phys. Soc. Jpn. 88, 113701 (2019)]

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Carlo De Santi, Arianna Nardo, Man Hoi Wong, Ken Goto, Akito Kuramata, Shigenobu Yamakoshi, Hisashi Murakami, Yoshinao Kumagai, Masataka Higashiwaki

, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini

Charge trapping and degradation of Ga2O3 isolation structures for power electronics

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Hideto Miyake, Masakazu Sugiyama, Yasuyuki Miyamoto, Masakazu Arai, Kazuhide Kumakura, Shugo Nitta, Munetaka Arita, Ryuji Katayama, Toshifumi Irisawa, Masataka Higashiwaki

, Katsuhiro Tomioka

Preface

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Man Hoi Wong

, Hisashi Murakami, Yoshinao Kumagai, Masataka Higashiwaki

Enhancement-Mode $β$ -Ga2O3 Current Aperture Vertical MOSFETs With N-Ion-Implanted Blocker

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This paper was not found in any repository; the policy of its publisher is unknown or unclear.

M. Higashiwaki

, S. Fujita

Preface

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Mathias Schubert, Alyssa Mock, Rafał Korlacki, Sean Knight, Bo Monemar, Ken Goto, Yoshinao Kumagai, Akito Kuramata, Zbigniew Galazka, Günther Wagner, Marko J. Tadjer, Virginia D. Wheeler, Masataka Higashiwaki

, Vanya Darakchieva

Phonon Properties

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Papers authored by Masataka Higashiwaki