Niklas Rorsman - Dissemin

Papers authored by Niklas Rorsman

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2015 A. Westlund, M. Winters, I. G. Ivanov, J. U. Hassan, P.-Å. Nilsson, E. Janzén, N. Rorsman

, J. Grahn

Graphene self-switching diodes as zero-bias microwave detectors

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Olle Axelsson, Mattias Thorsell, Kristoffer Andersson, Niklas Rorsman

The Effect of Forward Gate Bias Stress on the Noise Performance of Mesa Isolated GaN HEMTs

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Anna Malmros, Piero Gamarra, Marie-Antoinette Di Forte-Poisson, Hans Hjelmgren, Cedric Lacam, Mattias Thorsell, Maurice Tordjman, Raphael Aubry, Niklas Rorsman

Evaluation of Thermal Versus Plasma-Assisted ALD Al₂O₃ as Passivation for InAlN/AlN/GaN HEMTs

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M. Winters, E. Ö. Sveinbjörnsson, N. Rorsman

Hysteresis modeling in graphene field effect transistors

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Cesar Sánchez-Pérez, Mustafa Özen, Mustafa Ozen, Christer M. Andersson, Dan Kuylenstierna, Niklas Rorsman

, Christian Fager

Optimized Design of a Dual-Band Power Amplifier With SiC Varactor-Based Dynamic Load Modulation

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M. Winters, O. Habibpour, I. G. Ivanov, J. Hassan, E. Janzén, H. Zirath, N. Rorsman

Assessment of H-intercalated graphene for microwave FETs through material characterization and electron transport studies

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2014 Omid Habibpour, Michael Winters, Niklas Rorsman

, Herbert Zirath

High gain graphene field effect transistors for wideband amplifiers

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Szhau Lai, Dan Kuylenstierna, Mustafa Ozen, Mikael Horberg, Niklas Rorsman

, Iltcho Angelov, Herbert Zirath

Low Phase Noise GaN HEMT Oscillators With Excellent Figures of Merit

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Michael Winters, E. B. Thorsteinsson, E. O. Sveinbjornsson, Einar Ö. Sveinbjörnsson, H. P. Gislason, Jawad Hassan, Erik Janzen, Niklas Rorsman

Carrier Mobility as a Function of Temperature in as-Grown and H-intercalated Epitaxial Graphenes on 4H-SiC

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Oliver Silva Barrera, Iltcho Angelov, Herbert Zirath, Niklas Rorsman

High linearity MMIC power amplifier design with controlled junction temperature

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2013 Szhau Lai, Dan Kuylenstierna, Mikael Horberg, Niklas Rorsman

, Iltcho Angelov, Kristoffer Andersson, Herbert Zirath

Accurate Phase-Noise Prediction for a Balanced Colpitts GaN HEMT MMIC Oscillator

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J. Pomeroy, Niklas Rorsman

, Jr-Tai Chen, U. Forsberg, E. Janzen, M. Kuball

Improved GaN-on-SiC Transistor Thermal Resistance by Systematic Nucleation Layer Growth Optimization

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Bjorn Lundqvist, Peter Raad, Milan Yazdanfar, Pontus Stenberg, Rickard Liljedahl, Pavel Komarov, Niklas Rorsman

, J. Ager

, Olle Kordina, Ivan Ivanov, Erik Janzen

Thermal conductivity of isotopically enriched silicon carbide

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M. Winters, J. Hassan, H. Zirath, E. Janzén, N. Rorsman

A temperature dependent measurement of the carrier velocity vs. electric field characteristic for as-grown and H-intercalated epitaxial graphene on SiC

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David Gustafsson, Jessica Chani Cahuana, Dan Kuylenstierna, Iltcho Angelov, Niklas Rorsman

, Christian Fager

A Wideband and Compact GaN MMIC Doherty Amplifier for Microwave Link Applications

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C. M. Andersson, M. Özen, D. Gustafsson, K. Yamanaka, E. Kuwata, H. Otsuka, M. Nakayama, Y. Hirano, I. Angelov, C. Fager, N. Rorsman

A packaged 86 W GaN transmitter with SiC varactor-based dynamic load modulation

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Michael Winters, Mattias Thorsell, Jawad ul Hassan, Niklas Rorsman

, Erik Janzén, Herbert Zirath

A DC Comparison Study between H-Intercalated and Native Epi-Graphenes on SiC Substrates

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2012 Hans Hjelmgren, Mattias Thorsell, Kristoffer Andersson, Niklas Rorsman

Extraction of an Electrothermal Mobility Model for AlGaN/GaN Heterostructures

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M. Fagerlind, I. Booker, P. Bergman, E. Janzen, H. Zirath, N. Rorsman

Influence of Large-Aspect-Ratio Surface Roughness on Electrical Characteristics of AlGaN/AlN/GaN HFETs

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I. Angelov, M. Thorsell, K. Andersson, N. Rorsman

, E. Kuwata, H. Ohtsuka, K. Yamanaka

On the large-signal modeling of High Power AlGaN/GaN HEMTs

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Papers authored by Niklas Rorsman