Han Gao
0009-0000-1906-3835
ShanghaiTech University
2 papers found
Refreshing results…
545-mA/mm E-Mode Recessed-Gate GaN MOSHEMT (Vth > 4 V) by Ion Beam Etching
AlGaN/GaN MOS-HEMT enabled optoelectronic artificial synaptic devices for neuromorphic computing
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