Weidong Zhang - Dissemin

Papers authored by Weidong Zhang

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2012 B. Benbakhti, J. F. Zhang

, Z. Ji, W. Zhang

, J. Mitard, B. Kaczer, G. Groeseneken, S. Hall, J. Robertson, P. Chalker

Characterization of Electron Traps in Si-Capped Ge MOSFETs With $\hbox{HfO}_{2}/\hbox{SiO}_{2}$ Gate Stack

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J. F. Zhang

, Z. Ji, M. Duan, W. Zhang

, Ta Tang, Yl Jiang

Development of new characterisation technique for interface states beyond bandgap

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Baojun Tang, Wei Dong Zhang

, Jian Fu Zhang, G. Van den Bosch, M. Toledano-Luque, B. Govoreanu, J. Van Houdt

Investigation of Abnormal $V_{\rm TH}/V_{\rm FB}$ Shifts Under Operating Conditions in Flash Memory Cells With $ \hbox{Al}_{2}\hbox{O}_{3}$ High-$κ$ Gate Stacks

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Z. Ji, J. F. Zhang

, W. Zhang

A New Mobility Extraction Technique Based on Simultaneous Ultrafast $I_{d}$–$V_{g}$ and $C_{\rm cg}$– $V_{g}$ Measurements in MOSFETs

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M. Duan, J. F. Zhang

, Z. Ji, W. Zhang

, B. Kaczer, S. De Gendt, G. Groeseneken

Defect loss: A new concept for reliability of MOSFETs

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Zhigang Ji, Jian Fu Zhang

, Wei Dong Zhang

, Ben Kaczer, Stefan De Gendt, Guido Groeseneken

Interface States Beyond Band Gap and Their Impact on Charge Carrier Mobility in MOSFETs

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2011 L. Lin, Zhigang Ji, Zhigang Ji, Jian Fu Zhang

, Jian Fu Zhang, Wei Dong Zhang, Ben Kaczer, Stefan De Gendt, Guido Groeseneken

A Single Pulse Charge Pumping Technique for Fast Measurements of Interface States

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Xue Feng Zheng, C. Robinson, Wei Dong Zhang

, Jian Fu Zhang, B. Govoreanu, J. Van Houdt

Electron Trapping in HfAlO High-$κ$ Stack for Flash Memory Applications: An Origin of $V_{\rm th}$ Window Closure During Cycling Operations

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Lin Lin, Zhigang Ji, J. Zhang

, Weidong Zhang

Development of a Fast Technique for Characterizing Interface States

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2010 J. F. Zhang, Z. Ji, L. Lin, W. Zhang

Effective threshold voltage shift: A measure for NBTI removing uncertainty in mobility degradation

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D. Ruiz Aguado, B. Govoreanu, W. Dong Zhang

, M. Jurczak, K. De Meyer, J. Van Houdt

A Novel Trapping/Detrapping Model for Defect Profiling in High- $k$ Materials Using the Two-Pulse Capacitance–Voltage Technique

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Xue Feng Zheng, Wei Dong Zhang

, Bogdan Govoreanu, Jian Fu Zhang, Jan van Houdt

A New Multipulse Technique for Probing Electron Trap Energy Distribution in High- $κ$ Materials for Flash Memory Application

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Xue Feng Zheng, Wei Dong Zhang

, Bogdan Govoreanu, Daniel Ruiz Aguado, Daniel Ruiz Aguado, Jian Fu Zhang

, Jan Van Houdt

Energy and Spatial Distributions of Electron Traps Throughout $\hbox{SiO}_{2}/\hbox{Al}_{2}\hbox{O}_{3}$ Stacks as the IPD in Flash Memory Application

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2009 Z. Ji, S. de Gendt, J. F. Zhang

, W. Zhang

, G. Groeseneken, L. Pantisano, M. M. Heyns

An assessment of the mobility degradation induced by remote charge scattering

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X. F. Zheng, W. D. Zhang

, B. Govoreanu, J. F. Zhang

, J. Van Houdt

Impact of PDA temperature on electron trap energy and spatial distributions in SiO2/Al2O3 stack as the IPD in Flash memory cells

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Xf F. Zheng, Wd D. Zhang

, B. Govoreanu, Jf F. Zhang

, J. van Houdt

A discharge-based multi-pulse technique (DMP) for probing electron trap energy distribution in high-k materials for Flash memory application

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2008 W. D. Zhang

, B. Govoreanu, X. F. Zheng, D. Ruiz Aguado, M. Rosmeulen, P. Blomme, J. F. Zhang

, J. Van Houdt

Two-Pulse $C$–$V$ : A New Method for Characterizing Electron Traps in the Bulk of $ \hbox{SiO}_{2}/\hbox{high-}κ$ Dielectric Stacks

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2007 Mo H. Chang, Yangang Wang, Jian F. Zhang, Ce Zhao, Weidong Zhang

, Mingzhen Xu

Contribution of As-grown Hole Traps to NBTI

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Xuefeng Zheng, Weidong Zhang

, Jian Zhang, Yue Hao

Non-Uniform Distribution of Electron Traps Generated by FN Stress in Silicon Dioxides

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2006 Mo Huai Chang, Jian F. Zhang

, Wei D. Zhang

Assessment of capture cross sections and effective density of electron traps generated in silicon dioxides

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Papers authored by Weidong Zhang