Published in
2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
DOI: 10.23919/sispad.2017.8085307
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Simulation of GaN MOS capacitance with frequency dispersion and hysteresis
Proceedings article published in 2017 by
Koichi Fukuda 
,
Junichi Hattori,
Hidehiro Asai,
Mitsuaki Shimizu,
Tamotsu Hashizume,
Ieee
,
Junichi Hattori,
Hidehiro Asai,
Mitsuaki Shimizu,
Tamotsu Hashizume,
Ieee
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