Published in
Institute of Electrical and Electronics Engineers, IEEE Transactions on Electron Devices, 11(64), p. 4615-4621, 2017
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First Experimental Observation of Channel Thickness Scaling Induced Electron Mobility Enhancement in UTB-GeOI nMOSFETs
Journal article published in 2017 by
Wen Hsin Chang 
,
Toshifumi Irisawa,
Hiroyuki Ishii,
Hiroyuki Hattori,
Hiroyuki Ota,
Hideki Takagi,
Yuichi Kurashima,
Noriyuki Uchida,
Tatsuro Maeda
,
Toshifumi Irisawa,
Hiroyuki Ishii,
Hiroyuki Hattori,
Hiroyuki Ota,
Hideki Takagi,
Yuichi Kurashima,
Noriyuki Uchida,
Tatsuro Maeda
This paper was not found in any repository, but could be made available legally by the author.
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