Published in
Wiley, International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, 3(31), p. e2302, 2017
DOI: 10.1002/jnm.2302
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Simulation of graphitic contacts to p-type Si using a metal-resistor-semiconductor (M-R-S) model implemented in TCAD
Journal article published in 2017 by
M. S. N. Alnassar 
,
S. Luong,
H. N. Tran ,
J. G. Partridge,
A. S. Holland
,
S. Luong,
H. N. Tran ,
J. G. Partridge,
A. S. Holland
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