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Materials Research Society, Materials Research Society Symposium Proceedings, (452), 1996

DOI: 10.1557/proc-452-105

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Annealing studies of visible light emission from silicon nanocrystals produced by implantation

Journal article published in 1996 by G.; Nielsen B.; Di Mauro L. F. and others Ghislotti, B. Nielsen, B. Sheey, L. F. Di Mauro, A. Pifferi ORCID, P. Taroni, P. Mutti, L. Valentini, F. Corni, R. Tonini
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This paper is available in a repository.

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Abstract

AbstractThe annealing behavior of silicon implanted SiO2 layers is studied using continuous and time-gated photoluminescence (PL). Two PL emission bands are observed. A band centered at 560 nm is present in as implanted samples and it is still observed after 1000 °C annealing. The emission time is fast (0.2 -2 ns). A second band centered at 780 nm further increases when hydrogen annealing was performed. The emission time is long (1 μs - 0.3 ms).