Published in
Institute of Electrical and Electronics Engineers, IEEE Journal of the Electron Devices Society, 4(5), p. 256-261, 2017
DOI: 10.1109/jeds.2017.2706321
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Heteroepitaxial Beta-Ga2O3on 4H-SiC for an FET With Reduced Self Heating
Journal article published in 2017 by
Stephen A. O. Russell 
,
Amador Perez-Tomas ,
Christopher F. McConville,
Craig A. Fisher,
Dean P. Hamilton,
Philip A. Mawby,
Michael R. Jennings
,
Amador Perez-Tomas ,
Christopher F. McConville,
Craig A. Fisher,
Dean P. Hamilton,
Philip A. Mawby,
Michael R. Jennings
This paper is made freely available by the publisher.
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