MOS Capacitors are demonstrated on 4H-SiC using an octahedral ABO₃ ferroic thin-film as a dielectric prepared on several buffer layers. Five samples were prepared: ABO₃ on SiC, ABO₃ on SiC with a SiO₂ buffer (10 nm and 40 nm) and ABO₃ on SiC with an Al₂O₃ buffer (10nm and 40 nm). Depending on the buffer material the oxide forms in either the pyrochlore or perovskite phase. A better lattice match with the Al₂O₃ buffer yields a perovskite phase with internal switchable dipoles. Hysteresis polarization-voltage loops show an oxide capacitance of ~ 0.2 μF/cm² in the accumulation region indicating a dielectric constant of ~120.