Published in
Trans Tech Publications, Materials Science Forum, (897), p. 151-154, 2017
DOI: 10.4028/www.scientific.net/msf.897.151
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Physical Characterisation of 3C-SiC(001)/SiO<sub>2</sub> Interface Using XPS
Journal article published in 2017 by
Fan Li,
Oliver Vavasour,
Marc Walker,
David M. Martin,
Yogesh K. Sharma,
Stephen A. O. Russell,
Michael R. Jennings,
Amador Pérez-Tomás 
,
Philip A. Mawby
,
Philip A. Mawby
This paper is available in a repository.
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Abstract
Normally-on MOSFETs were fabricated on 3C-SiC epilayers using high temperature (1300 °C) wet oxidation process. XPS analysis found little carbon at the MOS interface yet the channel mobility (60 cm2/V.s) is considerably low. Si suboxides (SiOx, x<2) exist at the wet oxidised 3C-SiC/SiO2 interface, which may act as interface traps and degrade the conduction performance.