Published in
Trans Tech Publications, Solid State Phenomena, (255), p. 36-40
DOI: 10.4028/www.scientific.net/ssp.255.36
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Tris(Trimethylsilyl)Germane (Me<sub>3</sub>Si)<sub>3</sub>GeH: A Molecular Model for Sulfur Passivation of Ge(111) Surfaces
Journal article published in 2016 by
Gilbert Okorn,
Roland Fischer,
Beate Steller 
,
Philipp Engesser,
Harald Okorn-Schmidt
,
Philipp Engesser,
Harald Okorn-Schmidt
This paper is made freely available by the publisher.
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Abstract
Tristrimethylsilylgermane, (Me3Si)3GeH, was employed as a molecular model compound for hydrogen terminated Ge(111) surfaces. Time and temperature dependent NMR spectroscopy yielded rate constants for the reaction between (Me3Si)3GeH and elemental sulfur and allowed for the determination of the activation energy for this molecular model reaction to mimic germanium surface passivation.