Published in
American Institute of Physics, APL Materials, 5(6), p. 056103, 2018
DOI: 10.1063/1.5022339
Links
Tools
Accelerated carrier recombination by grain boundary/edge defects in MBE grown transition metal dichalcogenides
Journal article published in 2018 by
Ke Chen 
,
Anupam Roy ,
Amritesh Rai ,
Hema C. P. Movva ,
Xianghai Meng,
Feng He,
Sanjay K. Banerjee,
Yaguo Wang
,
Anupam Roy ,
Amritesh Rai ,
Hema C. P. Movva ,
Xianghai Meng,
Feng He,
Sanjay K. Banerjee,
Yaguo Wang
This paper is made freely available by the publisher.
Full text: Download
Preprint: archiving forbidden
Data provided by 