Published in
2018 18th International Workshop on Junction Technology (IWJT)
DOI: 10.1109/iwjt.2018.8330297
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On the manifestation of Ge pre-amorphization implantation (PAI) impact on both the formation of ultrathin TiSi<inf>x</inf> and the specific contact resistivity in TiSi<inf>x</inf>/n-Si contacts for sub-16/14 nm nodes and beyond
Proceedings article published in 2018 by
Jun Luo,
Shujuan Mao,
Jing Xu,
Guilei Wang,
Dan Zhang,
Xue Luo,
Ningyuan Duan,
Shi Liu,
Wenwu Wang,
Dapeng Chen,
Junfeng Li,
Chao Zhao,
Tianchun Ye 
