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Institute of Electrical and Electronics Engineers, IEEE Journal of Selected Topics in Quantum Electronics, 3(15), p. 850-860, 2009

DOI: 10.1109/jstqe.2009.2013181

Science Press, Zhongguo Ji Guang // Zhongguo Guang Xue Xue Hui, Zhongguo Ji Guang Bian Ji Yuan Hui Zhu Bian == Chinese Journal of Lasers, 7(47), p. 0701012, 2020

DOI: 10.3788/cjl202047.0701012

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Development of GaN-Based Vertical-Cavity Surface-Emitting Lasers

This paper is available in a repository.
This paper is available in a repository.

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Abstract

This paper reviews the fabrication technology and performance characteristics of optically pumped and electrically pumped GaN-based vertical-cavity surface-emitting lasers (VCSELs). The lasing action of optically pumped hybrid GaN-based VCSELs has been observed at room temperature due to the employment of high-quality and high-reflectivity AlN/GaN-based distributed Bragg reflectors in the VCSEL structure. Based on the device structure of the optically pumped hybrid GaN-based VCSELs, we further achieved the lasing action of electrically pumped GaN-based VCSELs under continuous-wave operation at 77 K. The laser has a threshold injection current of 1.4 mA and emits a blue wavelength at 462 nm together with a narrow linewidth of about 0.15 nm. The laser beam has a divergence angle of about 11.7deg with a polarization ratio of 80%. A very strong spontaneous coupling efficiency of 7.5 times 10-2 was measured.