Published in
Institute of Electrical and Electronics Engineers, IEEE Transactions on Nanotechnology, 2(16), p. 245-252, 2017
DOI: 10.1109/tnano.2017.2657888
Links
Tools
Calibrated Nanoscale Dopant Profiling and Capacitance of a High-Voltage Lateral MOS Transistor at 20 GHz Using Scanning Microwave Microscopy
Journal article published in 2017 by
Enrico Brinciotti,
Giorgio Badino,
Martin Knaipp,
Georg Gramse,
Juergen Smoliner,
Ferry Kienberger 
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
Published version:
archiving forbidden
Data provided by 