Published in
Springer (part of Springer Nature), Journal of Electronic Materials, 3(46), p. 1488-1496
DOI: 10.1007/s11664-016-5185-y
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Resistive Switching Characteristics of 10-nm-Thick Amorphous HoScO x Films Doped with Nb and Zn
Journal article published in 2016 by
Sea-Fue Wang 
,
Chia-Chun Hsu,
Jinn P. Chu,
Yi-Xin Liu,
Liang-Wei Chen
,
Chia-Chun Hsu,
Jinn P. Chu,
Yi-Xin Liu,
Liang-Wei Chen
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