Published in
IOP Publishing, Journal of Physics: Condensed Matter, 39(15), p. S2803-S2807
DOI: 10.1088/0953-8984/15/39/004
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Germanium-hydrogen pairs in silicon
Journal article published in 2003 by
B. Hourahine 
,
R. Jones,
Sven Öberg,
Pr R. Briddon,
T. Frauenheim
,
R. Jones,
Sven Öberg,
Pr R. Briddon,
T. Frauenheim
This paper was not found in any repository, but could be made available legally by the author.
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Preprint: archiving forbidden
Postprint:
archiving forbidden
Published version:
archiving forbidden
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Abstract
Hydrogen in a dilute SiGe alloy is considered theoretically in comparison with hydrogen in Si and Ge. Structural, vibrational and electronic properties of crystalline alloys containing ~1.6 at.% Ge complexed with single hydrogen atoms are considered. The behaviour of bond-centred hydrogen is found to be weakly perturbed, when compared to hydrogen in pure Si.