Published in
American Institute of Physics, Journal of Applied Physics, 12(123), p. 125705
DOI: 10.1063/1.5022245
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Effects of alloy composition and Si-doping on vacancy defect formation in (InxGa1–x)2O3 thin films
Journal article published in 2018 by
V. Prozheeva,
R. Hölldobler,
H. von Wenckstern 
,
M. Grundmann ,
F. Tuomisto
,
M. Grundmann ,
F. Tuomisto
This paper was not found in any repository, but could be made available legally by the author.
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