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American Institute of Physics, Journal of Applied Physics, 11(123), p. 113302

DOI: 10.1063/1.5001384

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Uniformity control of the deposition rate profile of a-Si:H film by gas velocity and temperature distributions in a capacitively coupled plasma reactor

Journal article published in 2018 by Ho Jun Kim, Hae June Lee ORCID
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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