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The Electrochemical Society, ECS Transactions, 6(75), p. 103-110, 2016

DOI: 10.1149/07506.0103ecst

ECS Meeting Abstracts, 28(MA2016-02), p. 1869-1869, 2016

DOI: 10.1149/ma2016-02/28/1869

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Fabrication of p-Type La: Fe2O3 as Photocathode Via Atomic Layer Deposition

Journal article published in 2016 by Qi Peng, Chun Du ORCID, Yanwei Wen, Bin Shan, Rong Chen
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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Abstract

Solar water splitting is a promising approach to develop the renewable energy. [1] Due to the excellent solution stability, earth abundance and suitable band gap, hematite is one of the most promising photoanode with n-type characteristics. [2] Nevertheless the high carrier recombination, [3] slow reaction kinetics [4] and mismatch of the band edge with the water splitting potentials [5] suppress the further promotion of its photolelectrochemical (PEC) performance. Combining with p-type material is an efficient way to tune the band structure and improve the charge carrier separation of hematite. Mg doped-hematite film with p-type characteristics was fabricated by atomic layer deposition (ALD) and significantly reduced the onset potential for photocurrent. [6] Recently, the perovskite LaFeO3 with band gap of 2.07eV are fabricated with intrinsic p-type characteristics and exhibit a high hydrogen evolution rate under visible light. [7, 8] Here we report the fabrication of p-type La: Fe2O3 and the n-p junction of Fe2O3/La: Fe2O3 by ALD technique for its excellent conformability and controllable film growth with low defect densities. We will demonstrate the La: Fe2O3 film with p-type characteristics with Mott−Schottky plots and Hall Effect. The cathodic photocurrent as well as the PEC performance will also be discussed. By preparing the n-p junction of Fe2O3/La: Fe2O3, we design to reduce the onset potential for the photocurrent more than 100 mV comparing to the pure Fe2O3 photoanode. The incident photon-to-current conversion efficiency (IPCE) of Fe2O3/La: Fe2O3 n-p junction can be increased more than 10% at 400 nm. The PEC performance, and its mechanism will also be discussed. References: F. E. Osterloh, Chem. Soc. Rev., 42, 2294 (2013). K. Sivula, F. L. Formal, M. Grätzel, Chem. Sus. Chem, 4, 432. (2011) M. P. Dareedwards, J. Chem. Soc. Faraday Trans. 1, 79, 2027 (1983). K. J McDonald, K. S. Choi, Chem. Mater., 23, 1686 (2011). J. Brillet, M. Cornuz, F. L. Formal, J. H Yum, M. Grätzel, K. Sivula, J. Mater. Res., 25, 17 (2010). Y. Lin, Y. Xu, M. T. Mayer, Z. I. Simpson, G. McMahon, S. Zhou , D. Wang, J. Am. Chem. Soc., 134, 5508 (2012). Q. Yu, X. G. Meng, T. Wang, P. Li, L. Q. Liu, K. Chang, G. G. Liu and J. Ye, Chem. Commun., 2015, 51, 3630. Q. Peng, J. Wang, Y. W. Wen, B. Shan, R. Chen, RSC Adv., 6, 26192 (2016).