Published in
IOP Publishing, Japanese Journal of Applied Physics, 4S(57), p. 04FG04, 2018
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A transient simulation approach to obtaining capacitance–voltage characteristics of GaN MOS capacitors with deep-level traps
Journal article published in 2018 by
Koichi Fukuda 
,
Hidehiro Asai,
Junichi Hattori,
Mitsuaki Shimizu,
Tamotsu Hashizume
,
Hidehiro Asai,
Junichi Hattori,
Mitsuaki Shimizu,
Tamotsu Hashizume
This paper is made freely available by the publisher.
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