Published in
2017 IEEE International Electron Devices Meeting (IEDM)
DOI: 10.1109/iedm.2017.8268513
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Threshold switching selector and 1S1R integration development for 3D cross-point STT-MRAM
Proceedings article published in 2017 by
Hongxin Yang,
Xiaojie Hao,
Zihui Wang,
Roger Malmhall,
Huadong Gan,
Kimihiro Satoh,
Jing Zhang,
Dong Ha Jung,
Xiaobin Wang,
Yuchen Zhou,
Bing K. Yen,
Yiming Huai
This paper was not found in any repository, but could be made available legally by the author.
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