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American Scientific Publishers, Science of Advanced Materials, 5(10), p. 651-654

DOI: 10.1166/sam.2018.3140

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InGaP/GaAs Superlattice-Emitter and GaAsBi Base Heterojunction Bipolar Transistor with High Current-Gain Linearity

Journal article published in 2018 by Yi-Chen Wu, Jung-Hui Tsai, Syuan-Hao Liou, Pao-Sheng Lin, Yu-Chi Chen, Te-Kuang Chiang
Distributing this paper is prohibited by the publisher
Distributing this paper is prohibited by the publisher

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