Published in
IOP Publishing, Japanese Journal of Applied Physics, Part 1, No. 1(42), p. 118-121, 2003
DOI: 10.1143/jjap.42.118
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Microcavity light emitting diodes based on GaN membranes grown by molecular beam epitaxy on silicon
Journal article published in 2003 by
Jean-Yves Duboz,
Nadia Briere de l'Isle,
N. B. De L'Isle,
Lydie Dua,
Pierre Legagneux,
Jean-Luc Reverchon,
N. Brière de l'Isle,
Mauro Mosca,
Benjamin Damilano 
,
Fabrice Semond,
P. Legagueux,
Nicolas Grandjean,
Jean Massies,
Richard Dudek,
Daniel Poitras
and other authors.
,
Fabrice Semond,
P. Legagueux,
Nicolas Grandjean,
Jean Massies,
Richard Dudek,
Daniel Poitras
and other authors.
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
Published version:
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system details: machine converted author identifier PE to PID, February 2012