Three-dimensional (3-D) micro-closed coils with high-permeability-material cores are fabricated by a complementary-metal-oxide-semiconductor (CMOS) process. Two micromachined integrated inductive components (bar type and ring type) are realized on silicon wafers. In addition, a high-permeability material is electroplated in place of Al-Si-Cu alloy in the triple-metal CMOS structure. In the 3-D structure, a 0.42-μm-high Ni-20%Fe permalloy magnetic core is wrapped with CMOS conductor lines. Applying the commercial CMOS process to improve conventional CMOS inductive components is of priority concern.