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Institute of Electrical and Electronics Engineers, IEEE Transactions on Electron Devices, 10(63), p. 3830-3836, 2016

DOI: 10.1109/ted.2016.2597540

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A Comparative Study of Defect Energy Distribution and Its Impact on Degradation Kinetics in GeO2/Ge and SiON/Si pMOSFETs

This paper is available in a repository.
This paper is available in a repository.

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