Published in
American Institute of Physics, Journal of Applied Physics, 19(119), p. 194301
DOI: 10.1063/1.4948954
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Effect of doping on room temperature carrier escape mechanisms in InAs/GaAs quantum dot p-i-n junction photovoltaic cells
Journal article published in 2016 by
D. G. Sellers,
E. Y. Chen,
S. J. Polly,
S. M. Hubbard,
M. F. Doty 
This paper is made freely available by the publisher.
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