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2016 IEEE Nanotechnology Materials and Devices Conference (NMDC)

DOI: 10.1109/nmdc.2016.7777084

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Experimental and simulation study of a high current 1D silicon nanowire transistor using heavily doped channels

Proceedings article published in 2016 by Vihar P. Georgiev ORCID, Muhammad M. Mirza, Alexandru-Iustin Dochioiu, Fikru-Adamu Lema, Slavatore M. Amoroso, Ewan Towie, Craig Riddet, Donald A. MacLaren, Asen Asenov, Douglas J. Paul
This paper is available in a repository.
This paper is available in a repository.

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