Published in

Cambridge University Press (CUP), MRS Internet Journal of Nitride Semiconductor Research, (2), 1997

DOI: 10.1557/s1092578300001277

Links

Tools

Export citation

Search in Google Scholar

Gain spectroscopy of HVPE-grown GaN

Journal article published in 1997 by L. Eckey, J.-C.-H.-R. Holst, A. Hoffmann, I. Broser, T. Detchprohm ORCID, K. Hiramatsu
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

Full text: Unavailable

Green circle
Preprint: archiving allowed
Upload
Green circle
Postprint: archiving allowed
Upload
Orange circle
Published version: archiving restricted
Upload
Policy details
Data provided by SHERPA/RoMEO

Abstract

We report on photoluminescence and optical gain measurements of highly excited GaN crystals grown by hydride vapor physe epitaxy (HVPE). Inelastic scattering processes of excitons dominate the spontaneous emission spectrum under high excitation up to temperatures of 180 K. Towards room temperature phonon-assisted recombination of excitons and free carriers begins to dominate the spectrum. Similar characteristics are observed in temperature-dependent gain measurements.