Cambridge University Press (CUP), MRS Internet Journal of Nitride Semiconductor Research, (2), 1997
DOI: 10.1557/s1092578300001277
Full text: Unavailable
We report on photoluminescence and optical gain measurements of highly excited GaN crystals grown by hydride vapor physe epitaxy (HVPE). Inelastic scattering processes of excitons dominate the spontaneous emission spectrum under high excitation up to temperatures of 180 K. Towards room temperature phonon-assisted recombination of excitons and free carriers begins to dominate the spectrum. Similar characteristics are observed in temperature-dependent gain measurements.