Published in
American Institute of Physics, Journal of Applied Physics, 24(120), p. 245704
DOI: 10.1063/1.4972482
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Electric-field induced quantum broadening of the characteristic energy level of traps in semiconductors and oxides
Journal article published in 2016 by
Mazharuddin Mohammed,
Anne S. Verhulst,
Devin Verreck 
,
Maarten Van de Put,
Eddy Simoen,
Bart Sorée,
Ben Kaczer,
Robin Degraeve,
Anda Mocuta,
Nadine Collaert,
Aaron Thean,
Guido Groeseneken
,
Maarten Van de Put,
Eddy Simoen,
Bart Sorée,
Ben Kaczer,
Robin Degraeve,
Anda Mocuta,
Nadine Collaert,
Aaron Thean,
Guido Groeseneken
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
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