Published in
MAIK Nauka/Interperiodica, Semiconductors, 9(50), p. 1241-1247
DOI: 10.1134/s1063782616090232
Links
Tools
Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs
Journal article published in 2016 by
A. F. Tsatsulnikov,
W. V. Lundin,
A. V. Sakharov,
E. E. Zavarin,
S. O. Usov,
A. E. Nikolaev,
M. A. Yagovkina,
V. M. Ustinov,
N. A. Cherkashin 
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
Data provided by 