Published in
Institute of Electrical and Electronics Engineers, IEEE Transactions on Electron Devices, 1(64), p. 115-120, 2017
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Combining High Hole Concentration in p-GaN and High Mobility in u-GaN for High p-Type Conductivity in a p-GaN/u-GaN Alternating-Layer Nanostructure
Journal article published in 2017 by
Hao-Tsung Chen,
Chia-Ying Su,
Charng-Gan Tu,
Yu-Feng Yao,
Chun-Han Lin,
Yuh-Renn Wu 
,
Yean-Woei Kiang,
Chih-Chung C. C. Yang
,
Yean-Woei Kiang,
Chih-Chung C. C. Yang
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