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Elsevier, Diamond and Related Materials, (66), p. 188-195

DOI: 10.1016/j.diamond.2016.04.006

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Mosaicity, dislocations and strain in heteroepitaxial diamond grown on iridium

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

The present study provides a multi-scale investigation of the crystalline quality and the structural defects present in heteroepitaxial diamond films grown on iridium/SrTiO3 (001) substrates bymicrowave plasma assisted chemical vapor deposition. X-ray diffraction, Raman spectroscopy and low temperature cathodoluminescence are combined to accurately characterize the mosaicity, the density of dislocations and the residual strain within the films. X-ray diffraction and Raman results confirm a structural quality at the state-of-the-art according to the epitaxial relationship 〈100〉diamond(001) // 〈100〉iridium(001) // 〈100〉SrTiO3 (001). In addition, Raman and cathodoluminescence observations on cross-sections reveal the presence of local strain.