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Wiley, Advanced Materials, 41(28), p. 9133-9141, 2016

DOI: 10.1002/adma.201602157

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Hybrid van der Waals p-n Heterojunctions based on SnO and 2D MoS2

Journal article published in 2016 by Zhenwei Wang, Xin He, Xixiang Zhang, Husam N. Alshareef ORCID
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

A p-type oxide/2D hybrid van der Waals p-n heterojunction is demonstrated for the first time between SnO (tin monoxide) (the p-type oxide) and 2D MoS2 (molybdenum disulfide), showing an ideality factor of 2 and rectification ratio up to 10(4) . The reported heterojunction is gate-tunable with typical anti-ambipolar transfer characteristics. Surface potential mapping is performed and a current model for such a heterojunction is proposed.