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American Institute of Physics, Applied Physics Letters, 13(98), p. 133506

DOI: 10.1063/1.3573991

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Detection of variable tunneling rates in silicon quantum dots

Journal article published in 2011 by A. Rossi, T. Ferrus ORCID, W. Lin, T. Kodera ORCID, D. A. Williams, S. Oda ORCID
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This paper is available in a repository.

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Abstract

Reliable detection of single electron tunneling in quantum dots (QD) is paramount to use this category of device for quantum information processing. Here, we report charge sensing in a degenerately phosphorus-doped silicon QD by means of a capacitively coupled single-electron tunneling device made of the same material. Besides accurate counting of tunneling events in the QD, we demonstrate that this architecture can be operated to reveal asymmetries in the transport characteristic of the QD. Indeed, the observation of gate voltage shifts in the detector's response as the QD bias is changed is an indication of variable tunneling rates. ; Comment: 4 pages, 3 figures