ECS Meeting Abstracts, 29(MA2010-02), p. 1789-1789, 2010
DOI: 10.1149/ma2010-02/29/1789
The Electrochemical Society, ECS Transactions, 5(33), p. 65-69, 2010
DOI: 10.1149/1.3481220
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Staggered bottom-gate hydrogenated nanocrystalline silicon (nc-Si:H) thin film transistors (TFTs) fabricated on flexible transparent polyimide substrates were investigated. The saturation electron field-effect mobility and electrical bias-stress stability of these TFTs were evaluated under applied tensile mechanical strain parallel to the source-drain direction. The mobilities increased accompanying with deteriorated electrical stabilities as the applied tensile strain increased. The power-law dependence between threshold voltage shift and gate-bias stressing time indicates that the instability is mainly caused by the state creation at the interface between nc-Si:H channel and gate dielectric.