ECS Meeting Abstracts, 33(MA2006-02), p. 1581-1581, 2006
DOI: 10.1149/ma2006-02/33/1581
The Electrochemical Society, ECS Transactions, 8(3), p. 249-253, 2006
DOI: 10.1149/1.2356360
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Thermo-mechanical theory of a device film-on-foil structure reveals that the layer-to-layer alignment accuracy and the radius of curvature of the structure are both controlled by the mismatch strain between the deposited films and the substrate. Amorphous silicon thin-film transistors fabricated on thin foils of steel or plastic must be grown with tensile built-in stress to make the structure as flat as possible, and for accurate layer-to-layer alignment.